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Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells. Hashmi, G., Junaebur Rashid, M., MAHMOOD, Z., Hoq, M., Rahman, M., 2018. JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL). Hashmi Galib, Junaebur Rashid Mohammad, MAHMOOD ZAHID HASAN, Hoq Mahbubul, Rahman Md. JOURNAL OF THEORETICAL AND APPLIED PHYSICS (IRANIAN PHYSICAL JOURNAL), 12(4), 327-334. Hashmi, G., & Junaebur Rashid, M., & MAHMOOD, Z., & Hoq, M., & Rahman, M. Keyword(s): Silicon solar cell,Anti-reflection coating (ARC),Surface passivation,External quantum efficiency (EQE) The effects on voltage, current, photovoltaic efficiency, reflectivity and external quantum efficiency due to ARCs are also represented in this work. 67% is being achieved by using SiO2 surface passivation and Si3N4 ARC layer. After efficient solar cell modeling, optimum efficiency of 20. Significant increase in efficiency has been observed by applying ARC in respect to not applying any kind of ARC. 34% efficient silicon solar cell with 74. Designing a single-layer silicon nitride ( Si3N4) ARC for 600 nm wavelength and with a thickness of 74. Simulation shows that the range of 500– 700 nm would be suitable for designing an ARC. The Silvaco n(W)-dependence is imposed on PC1d-simulations and the errors on are reduced to minimum.In this work, the impact of six different anti-reflection coating (ARC) layers has been investigated using PC1D simulation software. A function for n(W) fitting accurately the n(W)-data of Silvaco-simulations is given. To grow materials with an average thickness below 0.45 µm, magnetron co-sputtering was used. The errors on FF are due to the different dependences of ideality factor, n, on W. Samples of 5 standard cubic centimeters per minute (sccm) and 7 sccm exhibited appropriate characteristics and were further tested using personal computer one dimension (PC1D) computational simulation at the system stage. wavelength in intrinsic Si used in the two simulations. The errors on JSC are due to the different functions for absorption coefficient vs. The errors on are particularly noticeable because they include the errors on the remaining parameters, the most influencing of which are the errors on JSC and FF. We treat such discrepancies as errors by taking the Silvaco-values of parameters as references. thickness, W, of light-trapping n-p Si solar cells. We report on discrepancies between PC1d and Silvaco Atlas numerical device simulators detected in simulations of performance parameters (efficiency,, open-circuit voltage, VOC, short-circuit current, JSC, and fill factor, FF) vs. Silicon Solar Cell(s), Simulation, Modelling / Modeling 3 Silicon Solar Cell Characterisation and Modelling THU 09 September, 15:15-16:15 | The Emerging PV Reports InitiativeĢ.THU 09 September, 10:30-12:00 | Women Leading PV Research.WED 08 September, 17:00-18:30 | Data Exchange and reseach Collaboration through the PEARL PV CKAN Database.
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TUE 07 September, 13:30-15:00 | Solar Industry Forum.The researchers interested in fabrication of the proposed solar cell do not need to do iterative experiments to optimize doping level in absorber (p-Si). TUE 07 September, 10:30-12:00 | Innovative Digital Solutions for PV Installations The PC1D simulations give a good explanation of optimization of parameters.TUE 07 September, 08:30-10:00 | Qualification of PV Power Plants using Mobile Test Equipment.MON 06 September, 15:15-16:45 | Industry Presentations.MON 06 September, 13:30-15:00 | EU PVSEC Industry Summit Opening.MON 06 September, 17:00-18:30 | The Potential of Floating Solar in Africa.MON 06 September, 13:30-16:45 | Trends in PV Market Development: the path to 200 GW and more!.6 PV Applications, Integration and Storage.5 PV Systems – Modelling, Design, Operation and Performance.4 Photovoltaic Modules and BoS Components.
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3 Perovskites and Other Non-Silicon Materials and Devices, Multijunctions/Tandems.1 New Materials and Concepts for Photovoltaic Devices.